A SiGe/Si multiple quantum well avalanche photodetector

The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V, when exceeding 7 V, the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800–1500 nm wavelength range is also demonstrated.