Effect of collector design on the d.c. characteristics of In0.49Ga0.51PGaAs heterojunction bipolar transistors

InGaPGaAs heterojunction bipolar transistors with various collector structures are compared. The dependence of d.c. device characteristics on the thickness of the n− GaAs spacer in the collector of composite collector devices is presented. Results indicate that the spacer thickness significantly affects the performance of the transistor. An n+ doping spike on the InGaP side of the collector heterojunction is included in the collector design of the composite collector devices. Standard single-heterojunction d.c. results are compared to abrupt double- and composite collector heterojunction devices. Optimization of the spacer thickness, in conjunction with the n+ doping spike, eliminates most of the detrimental effects associated with a double-heterojunction device while retaining the beneficial properties of a wide-gap collector. As expected, the composite collector structure produces devices with higher breakdown voltages and lower offset voltages than single heterojunction devices. In addition, optimizing the spacer thickness can reduce the collector current saturation voltage of the composite collector device below that of a single-heterojunction device. These characteristics make composite collector heterojunction bipolar transistors ideal candidates for high power microwave device applications.