کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753443 | 895529 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Small-signal performance and modeling of sub-50 nm nMOSFETs with fT above 460-GHz
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have fabricated and tested the performance of sub-50 nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3–30 GHz. For a 30 nm × 40 μm × 2 device, we found fT = 465 GHz at Vds = 2 V, Vg = 0.67 V, which is the highest cut-off frequency reported for a MOSFET produced on bulk silicon substrate so far. However, our measurements of fmax and noise figure indicate that parasitics impose limitations on SHF operation. We also present a high frequency ac model appropriate to sub-50 nm gate length nanotransistors, which incorporates the effects of the parasitics. The model accurately accounts for measurements of the S- and Y-parameters in the frequency range from 1 to 50 GHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 6, June 2008, Pages 899–908
Journal: Solid-State Electronics - Volume 52, Issue 6, June 2008, Pages 899–908
نویسندگان
V. Dimitrov, J.B. Heng, K. Timp, O. Dimauro, R. Chan, M. Hafez, J. Feng, T. Sorsch, W. Mansfield, J. Miner, A. Kornblit, F. Klemens, J. Bower, R. Cirelli, E.J. Ferry, A. Taylor, M. Feng, G. Timp,