کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
754073 895793 2016 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
پیش نمایش صفحه اول مقاله
Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology
چکیده انگلیسی

The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics (MD) simulations. This work focuses on the effects of the implantation energy, dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation. Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature. By introducing a new parameter of defect rate, the influence of the processing parameters on defect rate is also quantitatively examined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Mechanica Solida Sinica - Volume 29, Issue 2, April 2016, Pages 111–119
نویسندگان
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