کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7700831 | 1496825 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SQM-OTFT: A compact model of organic thin-film transistors based on the symmetric quadrature of the accumulation charge considering both deep and tail states
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A physically-based compact model of organic thin-film transistors suitable for CAD simulators is proposed. It is worked out by means of a newly developed and particularly simple form of the charge-sheet model: the symmetric quadrature of the accumulation charge. The model is based on the variable-range hopping and accounts for both deep and tail states. It is simple, symmetric, accurately accounts for the below-threshold, linear, and saturation regimes via a unique formulation. The symmetric quadrature is accurate within 5% in all regions of operation and the resulting current model is suitable both for p- and n-type transistors. The model leads to a significant simplification of the drain current and of the quasi-static expressions of the terminal charges based on the Ward-Dutton partition. Finally, the symmetric quadrature leads to an explicit and analytically tractable solution for the surface potential as a function of position in the device channel that can be extremely useful to implement advanced physical effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 32, May 2016, Pages 70-77
Journal: Organic Electronics - Volume 32, May 2016, Pages 70-77
نویسندگان
Luigi Colalongo,