Cu-doping effect on dielectric properties of organic gel synthesized Ba4YMn3−xCuxO11.5±δ

Highlighting of many stacking faults (intergrowths) in substituted compounds with x>0.01 (right picture), which could explain the different dielectric properties observed in these compounds. However compounds with x>0.01 remain with a better stacking sequence as we can see on the left picture.