کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7850443 | 1508849 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanoscale interface formation and charge transfer in graphene/silicon Schottky junctions; KPFM and CAFM studies
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
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چکیده انگلیسی
In this study, nanoscale interface formation and photogenerated carrier transfer in Schottky-junction between CVD graphene and n-Si wafer have been investigated using CAFM and KPFM techniques. The difference in the surface potential images of graphene observed on applying voltage between tip-graphene and tip-Si under light conditions has been understood in terms of holes transfer to graphene resulting in the shift of Fermi level and the open circuit voltage variations at the junction. A decrease in surface potential due to PMMA residues and an increase in surface potential near wrapping boundaries are the main reasons for the variation in photovoltaic parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 98, March 2016, Pages 41-49
Journal: Carbon - Volume 98, March 2016, Pages 41-49
نویسندگان
Rakesh Kumar, Deepak Varandani, B.R. Mehta,