کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7852001 | 1508863 | 2015 | 35 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Towards type-selective carbon nanotube growth at low substrate temperature via photo-thermal chemical vapour deposition
ترجمه فارسی عنوان
به سوی رشد نانولوله های کربنی انتخابی در دمای پایین بستر از طریق رسوب بخار شیمیایی عکس-حرارتی
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
چکیده انگلیسی
Carbon nanotubes have been intensively researched for electronic applications, driven by their excellent electronic properties, where the goals are control and reproducibility of growth, semiconducting/metallic type selectivity and maintaining high quality of carbon nanotubes, in a process that is temperature-compatible with the electronics. Photo-thermal chemical vapour deposition can achieve these goals and, through a thorough investigation of the parameter space, we achieve very high nanotube-quality and growth rates, and produce a phase-diagram that reveals distinct regions for growing semiconducting and metallic single-walled nanotubes, as well as multi-walled. Correlation with the carbon-catalyst phase diagram allows for the development of a novel growth model. We propose that the temperature-gradient induces carbon diffusivity-gradient across the catalyst to yield the high growth rate. This is attributed to the increase of α-iron of catalyst. The growth control demonstrated here allows for integration of the nanotube growth process by photo-thermal deposition into mainstream electronics manufacture.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 84, April 2015, Pages 409-418
Journal: Carbon - Volume 84, April 2015, Pages 409-418
نویسندگان
Jeng-Shiung Chen, Vlad Stolojan, S. Ravi P. Silva,