Temperature dependence of the optical properties of thin Ge-Se-In films

The temperature coefficients of the linear thermal expansion, αl and the band gap, βEg were determined. Decrease of the values of αl from 2.49 × 10−4 K−1 to 4.55 × 10−5 K−1 and βEg from −1.3 × 10−3 eV·K−1 to −0.7 × 10−3 eV·K−1 was observed when indium content in the thin films was increased from 0 to 17 at.%.