کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990337 | 1516127 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the interface trap properties Al2O3/GaN vertical-type metal-oxide-semiconductor (MOS) capacitors homogeneously grown on GaN substrates with different surface treatments. The electrical and microstructure characteristics are analyzed with regard to the behaviors and natures of different trap states at and close to the MOS interface. It is shown that only acid cleaning could not effectively suppress the interface traps, while a following (NH4)2S passivation drastically reduce the interface state density to the detection limit of â¼1011â¯cmâ2eVâ1. At the same time, border traps and fixed charges located close to the MOS interface are also suppressed, leading to a neglecting electrical hysteresis and frequency dispersion in the capacitance-voltage measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 767, 30 October 2018, Pages 600-605
Journal: Journal of Alloys and Compounds - Volume 767, 30 October 2018, Pages 600-605
نویسندگان
Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang,