Diminished band discontinuity at the p/i interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer

Diminished band discontinuity at the p/i interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 762, 25 September 2018, Pages 616-620

Duy Phong Pham, Sangho Kim, Anh Huy Tuan Le, Jinjoo Park, Junsin Yi,