کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7993521 | 1516152 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on the materials of heavily Mg-doped AlInP layers for laser diode structure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
High concentration p-type AlInP material is an important layer to achieve low resistant and large carrier confinement in short-wavelength red-light laser diodes (LDs). To investigate the Mg doping behavior and other characteristics in the red-light LDs with tensile GaInP well structure, two LDs wafers with different Mg-doped AlInP cladding layers were grown by the metalorganic chemical vapor deposition (MOCVD) method. Incorporation and activation behavior of Mg atoms in heavily-doped AlInP were analyzed by the comparisons between hole concentration and atom concentration. We demonstrate that it is possible to achieve hole concentration above 1018â¯cmâ3 using Mg dopant in AlInP layers just by an in-situ annealing. Furthermore, a hole concentration as high as 2.92â¯Ãâ¯1018â¯cmâ3 was achieved after post rapid thermal annealing in the N2 atmosphere, which is the highest hole doping concentrations reported to-date for the p-AlInP material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 790-796
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 790-796
نویسندگان
Tao Lin, Jingjing Li, Tianjie Zhang, Nan Lin, Cong Xiong, Xiaoyu Ma,