کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7999744 | 1516270 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of MgxZn1âxO films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the structural and optical properties of non polar a-plane MgxZn1âxO (0 ⩽ x ⩽ 0.57) films on r-plane sapphire substrates grown by plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction (RHEED) revealed a formation of cubic MgO phase when an Mg concentration increases. Room temperature (RT) photoluminescence (PL) and transmission electron microscopy consistently revealed the formation of cubic MgO phase from the Mg0.21Zn0.79O film. The Mg0.11Zn0.89O film showed a band edge emission at â¼360 nm, which is a shorter wavelength than the ZnO (â¼373 nm), from the RT PL measurements. Photoluminescence excitation (PLE) measurements at RT showed that band-gap energies of MgxZn1âxO films could be tuned up to â¼4.65 eV (â¼270 nm) although cubic MgO phase were mixed for high Mg concentration. For the single phase wurtzite MgZnO film, band-gap energy of 3.48 eV was obtained from the Mg0.11Zn0.89O film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 623, 25 February 2015, Pages 1-6
Journal: Journal of Alloys and Compounds - Volume 623, 25 February 2015, Pages 1-6
نویسندگان
Seok Kyu Han, Hyo Sung Lee, Dong-Yeob Kim, Soon-Ku Hong, Byung Jun Ahn, Jung-Hoon Song, Myoungho Jeong, Ju Ho Lee, Jeong Yong Lee, Takafumi Yao,