کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032957 | 1517963 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of surface passivation of ozone- and water-based Al2O3 films grown by atomic layer deposition for silicon solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the effects of the thermal stability of atomic layer deposition (ALD) oxidants on the surface passivation of ALD-Al2O3 film. The results showed good passivation at temperatures not greater than 780â¯Â°C. However, we found that Al2O3 films with an ozone oxidant showed better surface passivation at high temperatures than the water-based samples. The Al2O3 films with a water oxidant yielded an additional interfacial oxide upon high-temperature annealing. In the case of the ozone-based samples, the interfacial SiO bonds that formed during deposition were more stable. This structural change degraded chemical passivation, which increased the interface-trap density to ~1012â¯eVâ1â¯cmâ2. The passivation performance of ALD-Al2O3 films showed that at temperatures over 780â¯Â°C the passivation quality was affected more by defective passivation at the Si/SiOx interface than by a negative-fixed charge.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 57-60
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 57-60
نویسندگان
Young Joon Cho, Kwun-Bum Chung, Hyo Sik Chang,