Columnar Te-doped-PbSe thin films on glass for infrared photoelectric detection

The Te-doped-PbSe thin films with columnar architecture on amorphous glass substrates were deposited with different sputtering powers using RF magnetron sputtering. The sputtering power dependence of the structural and photoelectrical properties for the films was investigated. With sputtering power increasing from 60 W to 140 W, the preferred orientation of the thin films transferred from (200) to (111). The optical characterization reveals that the absorption is effective in the near and mid-infrared regimes. According to the photoelectric tests, the Te-doped-PbSe thin films exhibit quick and stable photoresponse when illuminated with infrared light. The photoresistor devices based on the films show excellent sensitivity upon repeated IR light on and off cycles. The resistance change rate is over 13% for the thin films, and higher sputtering power produces better sensitivity.