کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044867 | 1518940 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High quality N-polar n-type GaN films were deposited on vicinal C-face n-SiC substrates by metal organic chemical vapor deposition for vertical conducting devices. We employed the SiNx interlayer to N-polar GaN growth and studied the effect of SiNx interlayer on the properties of N-polar GaN. We found that the properties of N-polar films were greatly improved by using SiNx interlayer as characterized by X-ray diffraction, photoluminescence, and I-V measurements. N-polar n-type GaN films with SiNx interlayer exhibited a full width at half maximum of 422 arcsec for (0002) omega scan and 335 arcsec for (101¯2) omega scan, respectively. Integrated intensity ratio of near-band-edge emission and yellow-luminescence was increased by a factor of 4 by using SiNx interlayer. Besides, the resistance of the vertical structure with SiNx interlayer was reduced by 25% in comparison with that without SiNx interlayer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 130, August 2016, Pages 119-123
Journal: Vacuum - Volume 130, August 2016, Pages 119-123
نویسندگان
Gaoqiang Deng, Yuantao Zhang, Zhen Huang, Baozhu Li, Baolin Zhang, Guotong Du,