کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8139561 1523581 2018 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The generation of post noon F3 layers over the dip equatorial location of Thiruvananthapuram- A new perspective
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه علوم زمین و سیارات فیزیک زمین (ژئو فیزیک)
پیش نمایش صفحه اول مقاله
The generation of post noon F3 layers over the dip equatorial location of Thiruvananthapuram- A new perspective
چکیده انگلیسی
In the present paper, occurrence of post noon F3 layers over Thiruvananthapuram (8.5°N; 77°E; dip latitude ∼ 1.5 °N), a dip equatorial station in India have been investigated. F3 layers that occur beyond 13 IST and as observed using ground based ionosonde, for the years 2004-2008 have been studied. Our analysis shows that post noon F3 layers occur mostly on CEJ days around 16 IST to 18 IST. It is found that the time of the ionospheric E−region electric field reversal as inferred from collocated ground based magnetometer observations plays a crucial role in the generation of post noon F3 layers. In fact an early reversal of electric field emerged to be the necessary condition for the formation of post noon F3 layers. A time delay of three to 4 h is observed between the electric field reversal and the formation of F3 layer. It is proposed that this early reversal causes enhanced ionization over dip equatorial region, providing an additional ion drag to the flow of thermospheric zonal wind. This leads to accumulation of more ionization and neutrals culminating in the generation of post noon F3 layers as in the case of pre noon F3 layers. These results reveal that the generation of post noon F3 layers over the dip equatorial region is a natural consequence of the variability associated with the spatio-temporal evolution of EIA and prevailing thermospheric and ionospheric dynamics, and adds a new perspective to the present understanding.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Atmospheric and Solar-Terrestrial Physics - Volume 170, May 2018, Pages 55-63
نویسندگان
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