کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146963 | 1524115 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of dislocations in HgCdTe epilayers at (1Â 1Â 1)B and (1Â 1Â 0) surfaces using modified defect etchant
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A new etchant, based on the modification of standard Chen etchant has been developed for revealing etch pits in HgCdTe epilayer at (1Â 1Â 1)B and (1Â 1Â 0) planes. We have optimized the oxidizing and dissolving agents in the solution by systematic experimentation to obtain the new etchant. By using this etchant we revealed the etch pits reliably and consistently in several HgCdTe epilayers grown on (1Â 1Â 1)B face CdZnTe substrates using LPE (liquid phase epitaxy) technique, The new etchant is not sensitive to the sample orientation and works equally well for both (1Â 1Â 1) and (1Â 1Â 0) planes. The dislocations revealed by the modified etchant were investigated by the study of etch pits at (1Â 1Â 1)B surface and at the cleaved plane, i.e., (1Â 1Â 0) face. Different types of etch pits have been observed and investigated. The etch pits were found to be dependent on the CdZnTe substrate and the stress induced during the growth itself.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 378-383
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 378-383
نویسندگان
Radheshyam Nokhwal, Raghvendra Sahai Saxena, B.L. Sharma, Anand Kumar, S.A. Hashmi, R.K. Sharma,