کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8156845 | 1524847 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Si-doping on magnetic properties of Ga1âxCrxN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ga1âxCrxN thin films with and without the Si doping have been prepared by molecular beam epitaxy. The samples have been investigated by X-ray diffraction, X-ray photoemission spectroscopy, photoluminescence, optical absorption spectra and magnetic measurements. It has been confirmed that for the undoped samples Cr in GaN is predominantly trivalent when substituting for Ga and that the Cr 3d state appears within the band gap of GaN. In Si doped specimens the upward shifts of the chemical potential are observed, and the electrons supplied by the Si doping are trapped at Cr sites forming Cr2+. As a result, the Si doping effects show an increase of the Curie temperature, and a reduction of the saturation magnetization in the Ga1âxCrxN:Si samples. The significant effect on the ferromagnetism with Si doping in Ga1âxCrxN is explained by the percolation theory of bound magnetic polarons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 564-568
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 564-568
نویسندگان
Zhongpo Zhou, Zongxian Yang, Chang Liu,