کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8948492 | 1645668 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C3N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3N4/FTO structure was prepared using drop-coated g-C3N4 powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~â¯52) and good reliability under applied voltage window of 4.0â¯V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 18108-18112
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 18108-18112
نویسندگان
Xiaojun Wang, Bai Sun, Xiaoxia Li, Bolin Guo, Yushuang Zeng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Shu Tian, Weiting Luo,