کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8948504 1645668 2018 19 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator
چکیده انگلیسی
The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSnxSiO(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSnxSiO(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO5 phase was achieved in the 1.0 wt% LiF-doped CaSn0.94SiO4.88 ceramics sintered at 1175 °C, which exhibited good microwave dielectric properties of εr = 11.6, Q × f = 34000 GHz, and τf = +73.2 ppm/°C. The positive τf value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising τf compensator.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 18209-18212
نویسندگان
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