کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8948504 | 1645668 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive Ïf compensator
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSnxSiO(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSnxSiO(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO5 phase was achieved in the 1.0â¯wt% LiF-doped CaSn0.94SiO4.88 ceramics sintered at 1175â¯Â°C, which exhibited good microwave dielectric properties of εr =â¯11.6, Qâ¯Ãâ¯fâ¯=â¯34000â¯GHz, and Ïf =â¯+73.2â¯ppm/°C. The positive Ïf value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising Ïf compensator.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 18209-18212
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 18209-18212
نویسندگان
Yan-Bo Guo, Jun-Tian Ma, Jian-Xiong Zhao, Kang Du, Zhong-Tian Fang, Yi-Qun Zheng, Wen-Zhong Lu, Wen Lei,