کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812898 1518122 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of a capacitively coupled RF plasma for SiO2 deposition: numerical and experimental results
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Characterization of a capacitively coupled RF plasma for SiO2 deposition: numerical and experimental results
چکیده انگلیسی
A fluid model including an electron beam of hot electrons is presented and used to describe the transport of charged particles in a 13.56-MHz O2 plasma. An increase in the electron density when the RF power increases is observed from Langmuir probe measurements. The calculated evolution of the electron number density shows a reasonable agreement if the secondary emission coefficient is chosen equal to 10−4 on a steel (316L) electrode. The values of the plasma potential increase with increasing RF power from 30 to 35 V at 0.5-0.6 Torr, in the range 100-300 W. Surprisingly, the electron temperature decreases with increasing applied RF power. No clear explanation for this behavior is available yet.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1–2, 22 March 2005, Pages 118-123
نویسندگان
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