کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812907 | 1518122 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of BLT thin films using MgO buffer layer for MFIS-FET
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on SiO2/Si and Bi3.25La0.75Ti3O12 (BLT) thin films were used as a ferroelectric layer. The electrical of the metal ferroelectric insulator semiconductor (MFIS) structure were investigated by varying the MgO layer thickness. Transmission electron microscopy (TEM) shows no interdiffusion and reaction that suppressed by using the MgO film as a buffer layer. The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the MgO layer. Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 166-170
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 166-170
نویسندگان
Kyoung-Tae Kim, Jung-Mi Lee, Sang-Hun Song, Chang-Il Kim,