کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812912 | 1518122 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of Ru nucleation by pretreatments of the underlying TaSiN film surface in Ru MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Surface pretreatment of the underlying film to enhance Ru nucleation is essential in molecular organic chemical vapor deposition (MOCVD) of Ru. In the present work, effects of argon plasma, hydrogen plasma, and palladium sputtering treatments of the Ta-Si-N film surface on Ru nucleation in Ru MOCVD were investigated using scanning electron microscopy (SEM) and Auger electron emission spectrometry (AES) analyses. It was found from the analysis results that palladium sputtering treatment is the most efficient, argon plasma treatment is the next, and hydrogen plasma treatment is the third in enhancing Ru nucleation. Also, the mechanism through which Ru nucleation is enhanced by these pretreatments and why the nucleation enhancing efficiencies of these three pretreatments are different are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 194-197
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 194-197
نویسندگان
Jongmin Lim, Hyunah Park, Chongmu Lee,