کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812925 | 1518122 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical characteristics of ITO films by pulsed laser deposition using a 10 wt.% SnO2-doped In2O3 ceramic target
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the effect of the oxygen pressure and the deposition temperature on the electrical and optical properties of the Sn-doped indium oxide (ITO) films on quartz glass substrate by pulsed laser deposition (PLD) using a 10 wt.% SnO2-doped In2O3 target. The resistivity and the carrier concentration of the films were decreased due to the decrease of the oxygen vacancy while increasing the oxygen pressure. With increasing deposition temperature, the resistivity of the films was decreased and the carrier concentration was increased due to the grain growth and the enhancement of the Sn diffusion. We have optimized the PLD process to deposit a highly conductive and transparent ITO film, which shows the optical transmittance of 88% and the resistivity of 2.49Ã10â4 Ω cm for the film thickness of 180 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 262-266
Journal: Thin Solid Films - Volume 475, Issues 1â2, 22 March 2005, Pages 262-266
نویسندگان
Sang Hyeob Kim, Nae-Man Park, TaeYoub Kim, GunYong Sung,