Synthesis of GaN nanospindles via a facile solid-state reaction route

Gallium nitride (GaN) nanospindles have been synthesized via a solid-state reaction at a low-temperature condition. X-ray powder diffraction (XRD), Raman spectrum and high-resolution transmission electron microscopy (HRTEM) revealed that the synthesized GaN crystallized in a hexagonal structure and displaying spindly particles morphology has an average diameter of 100 nm and length of 400 nm X-ray photoelectron spectroscopy (XPS) of the sample gave the atomic ratio of Ga and N of 1.04:1. Room-temperature photoluminescence (PL) spectrum showed that the as-prepared product had a peak emission at 372 nm. The possible formation mechanism of the wurtzite GaN is briefly discussed.