کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9952387 | 1450513 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal reliability investigation of Ag-Sn TLP bonds for high-temperature power electronics application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transient liquid phase (TLP) bonding is a potential joining technology for high-temperature power electronics packaging. In this study, the thermal reliability of Ag-Sn TLP bond was investigated through high-temperature storage test, in which the relationship between microstructure evolution and mechanical property was developed during 350â¯Â°C aging. After aging for 120â¯h, the Ag3Sn or ζ phase within the joint evolved totally into Ag(Sn) solid solution, which fractured with a ductile characteristic during shear test. The Ag-Sn TLP bond was confirmed to operate at ambient temperature of 350â¯Â°C for nearly 1000â¯h without serious failure, still possessing high shear strength of about 40â¯MPa. During thermal aging, a great amount of irregular Ni-Sn intermetallic particles were precipitated and dispersed adjacent to the interface between the Cu substrate and the Ag-Sn phases once the Ag metallization layer was consumed entirely. Moreover, a relatively thick Ni buffer layer should be carefully considered to prevent continuous cracks propagating along the Cu/Ag(Sn) interface, which was induced by the significant outflow of Cu flux from the interfacial zone, like a Kirkendall voiding process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 91, Part 1, December 2018, Pages 38-45
Journal: Microelectronics Reliability - Volume 91, Part 1, December 2018, Pages 38-45
نویسندگان
Huakai Shao, Aiping Wu, Yudian Bao, Yue Zhao, Guisheng Zou, Lei Liu,