Keywords: مشخصات دوپینگ; Silicon pad diodes; Doping profile; Edge effects; Capacitance-voltage;
مقالات ISI مشخصات دوپینگ (ترجمه نشده)
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Keywords: مشخصات دوپینگ; Silicon solar cells; Specific contact resistance; Screen printing metallization; Phosphorus; Boron; Doping; Doping profile;
Band engineering of a Si quantum dot solar cell by modification of B-doping profile
Keywords: مشخصات دوپینگ; Band engineering; Si Quantum dot; Solar cell; Electric Field; Doping profile;
Determination of the p-spray profile for n+p silicon sensors using a MOSFET
Keywords: مشخصات دوپینگ; Silicon pixel sensor; p-type silicon; p-spray; Doping profile; MOSFET; TCAD simulations;
Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation
Keywords: مشخصات دوپینگ; DG MOSFETs; Short-channel effects (SCEs); Non-equilibrium Green's function (NEGF); Underlap; Doping profile
Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
Keywords: مشخصات دوپینگ; Doping profile; Design optimization; Geometric programming; MOS devices;
Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model
Keywords: مشخصات دوپینگ; Boltzmann–Poisson system; Semiconductor devices; Doping profile; Inverse problems; Parameter identification; Inverse doping; Drift–diffusion
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
Keywords: مشخصات دوپینگ; Gate-induced drain leakage (GIDL); Low standby power (LSTP); Doping profile; Numerical simulation; GIDL extraction
On the existence of ground states for nonlinear Schrödinger–Poisson equation
Keywords: مشخصات دوپینگ; 35Q55; 37K05; 35K55Nonlinear Schrödinger–Poisson; Ground states; Doping profile; Conservation laws
Improved determination of phosphorus contamination during ion implantation by SRP and simulations
Keywords: مشخصات دوپینگ; 81.05.Ea; 84.37.+q; 85.40.Ry; Phosphorus; Antimony; Implantation; Cross-contamination; Doping profile; SIMS; Spreading resistance; Simulation;
Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
Keywords: مشخصات دوپینگ; Carbon nanotube; Ambipolarity; Band to band tunneling; Doping profile
Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy
Keywords: مشخصات دوپینگ; 78.30.Fs; 68.55.Ln; 73.20.Mf; Micro-Raman; Zn-doped GaAs; Beveled structure; Photoexcited steady-state plasma; Plasmon-LO-phonon coupling; Doping profile;
Simulation of boron diffusion in Si and strained SiGe layers
Keywords: مشخصات دوپینگ; SiGe HBT; Doping profile; SUPREM IV.GS; ISE TCAD
Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes
Keywords: مشخصات دوپینگ; 4H–SiC p–i–n diode; J–V characteristic; Ion implantation; Doping profile; Junction depth
Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers
Keywords: مشخصات دوپینگ; 85.30.De; 68.37.Ps; 06.60.EiScanning capacitance microscopy; Silicon monolayers; Doping profile; Bevel
Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer
Keywords: مشخصات دوپینگ; SiGe; Phosphorus; Doping profile; SIMS; Spreading resistance; DIOS
Determination of phosphorus contamination during antimony implantation by measurement and simulation
Keywords: مشخصات دوپینگ; 81.05.Ea; 84.37.+q; 85.40.Ry; Implantation; Doping profile; SIMS; Spreading resistance;
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique
Keywords: مشخصات دوپینگ; Ni-Silicide; Strained-Si; Schottky diode; Heterojunction; Doping profile