Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Design considerations of underlapped source/drain regions with Gaussian doping profile in nano-double-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are presented by developing a two-dimensional full quantum simulation. The simulations have been done by the self-consistent solution of 2-D Poisson–Schrodinger equations, within the none-equilibrium Green's function formalism. The effects of varying the underlapped source/drain parameters are investigated in terms of on current, gate work function, subthreshold swing, drain induced barrier lowering and device doping profile plane view. Simulation results demonstrate that we can improve the double-gate MOSFETs performance with proper selection of the underlapped source/drain parameters.