Keywords: رانش-انتشار; Cognitive control; Instructions; Response conflict; Simon; Conflict adaptation; Drift-diffusion;
مقالات ISI رانش-انتشار (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: رانش-انتشار; Solar cells; Drift-diffusion; Charge mobility unbalance; Organic semiconductors;
Keywords: رانش-انتشار; 35Q83; 35Q84; 35B25; 82D10; 76X05Multispecies; Plasma physics; Magnetic field; Vlasov–Poisson; Vlasov–Poisson–Fokker–Planck; Drift-diffusion
Keywords: رانش-انتشار; Organic solar cells; Drift-diffusion; Charge carrier density; Mobility
Keywords: رانش-انتشار; Semiconductor quantum dots; Intermediate band; Electrical modeling; Drift-diffusion
A fast and robust numerical scheme for solving models of charge carrier transport and ion vacancy motion in perovskite solar cells
Keywords: رانش-انتشار; Perovskite solar cell; Ion vacancy; Drift-diffusion; Finite element; Finite difference; Stiffness;
Why perovskite solar cells with high efficiency show small IV-curve hysteresis
Keywords: رانش-انتشار; Perovskite solar cells; Mobile ions; Hysteresis; Numerical simulation; Drift-diffusion;
Indirect excitons in (111) GaAs double quantum wells
Keywords: رانش-انتشار; Indirect exctions; Drift-diffusion; Dipolar interactions; (111) GaAs;
Simulation of OLEDs with a polar electron transport layer
Keywords: رانش-انتشار; OLED; Polar ETL; Simulation; Impedance spectroscopy; Drift-diffusion; Capacitance-voltage;
Detailed evaluation of in-operando potentials in OLED devices: A combined experimental and drift-diffusion study
Keywords: رانش-انتشار; Organic Light Emitting Diodes; Drift-diffusion; Onset voltage shift; Potential distribution
Influence of the charge carrier mobility on the dynamic behavior and performance of the single-layer OLED
Keywords: رانش-انتشار; Electrical modeling; Drift-diffusion; Single layer OLED; Carrier mobility
SB–PE drift-diffusion algorithm for FET devices global modeling
Keywords: رانش-انتشار; Drift-diffusion; Global modeling; Q2D model; Physic-based analysis
Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)
Keywords: رانش-انتشار; DGMOSFET; Short channel effect; Heterostructure; TCAD; Drift-diffusion
Sensitivity analysis of current generation in organic solar cells—comparing bilayer, sawtooth, and bulk heterojunction morphologies
Keywords: رانش-انتشار; Sensitivity analysis; Organic solar cells; Heterogeneous microstructure; Drift-diffusion
3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs
Keywords: رانش-انتشار; Implant free III-V MOSFETs; Random dopant variability; Drift-diffusion; Density gradient; Threshold voltage; Off-current; Sub-threshold slope;
Charge extraction with linearly increasing voltage: A numerical model for parameter extraction
Keywords: رانش-انتشار; CELIV; Charge carrier mobility; Numerical simulation; Parameter extraction; Drift-diffusion
Modeling semiconductor devices by using Neuro Space Mapping
Keywords: رانش-انتشار; Drift-diffusion; Neuro Space Mapping; RBF neural network; Semiconductor device modeling
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs
Keywords: رانش-انتشار; Interface state trap density; III–V MOSFETs; Drift-diffusion
Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling
Keywords: رانش-انتشار; Multilevel preconditioners; Multigrid; Nonsmoothed aggregation; Newton–Krylov; Schwarz domain decomposition; Graph partitioning; Drift-diffusion; Semiconductor devices; Finite element
TiberCAD: A new multiscale simulator for electronic and optoelectronic devices
Keywords: رانش-انتشار; CAD; Simulation; Multiscale; Drift-diffusion; Strain
Periodic structure of spin-transfer current in ferromagnetic multilayers
Keywords: رانش-انتشار; 72.25.Dc; 75.30.Ds; 75.75.+a; 72.15.Lh; Spin-transfer; Ferromagnetic multilayers; Drift-diffusion; Fractal structure; Phase-locking nanooscillators;
Impact of scattering in 'atomistic' device simulations
Keywords: رانش-انتشار; Trapped charge; Atomistic; Monte Carlo; Drift-diffusion;
A 1D coupled Schrödinger drift-diffusion model including collisions
Keywords: رانش-انتشار; 65Z05; 82D37; 78A35; 82C70; 34L40; 34L30; 34L25; Quantum-classical coupling; Schrödinger equation; Scattering states; Pauli master equation; Drift-diffusion; Interface conditions;