کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10139024 | 1645929 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H or AlOx:H/SiNx:H during treatment at 150â¯Â°C and 1 sun equivalent illumination intensity. Degradation of SiNx:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlOx:H/SiNx:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 188, 15 December 2018, Pages 112-118
Journal: Solar Energy Materials and Solar Cells - Volume 188, 15 December 2018, Pages 112-118
نویسندگان
David Sperber, Anton Schwarz, Axel Herguth, Giso Hahn,