Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells

In this paper, the low-field carrier mobility is investigated for quasi-2D electrons in a n-doped In0.53Ga0.47As/InP single symmetric quantum well. An accurate variational scheme is developed in view to determine the subband structure in this lattice-matched heterostructure. In this scheme, the Schrödinger-Poisson coupled equations are solved observing adequate matching conditions at the heterointerfaces, as well as exchange-correlation corrections to the Hartree potential. The results allowed us to compute the main scattering rates. Some interchanges in these scattering rates were found with respect to the limitation of electron mobility by varying the well and the spacer widths.