Channel scaling of hybrid GaN MOS-HEMTs

► We studied the effect of downscaling of the MOS channel of hybrid GaN MOS-HEMT. ► Numerical simulations were used in this study. ► The improvement in on-state conduction were quantified. ► A Ron,sp of 2.1 mΩ-cm2 was projected for MOS channel of 0.38 μm. ► We also found that GaN cap layer reduced short channel effects.