Role of vapor pressure of 1,4-bis(trimethylsilyl)benzene in developing silicon carbide thin film using a plasma-assisted liquid injection chemical vapor deposition process

► Single-stage mass loss and moderate vapor pressure favor TMSB as an ideal precursor. ► Temperature dependence of vapor pressure and enthalpies of TMSB is new. ► Promising SiC coating obtained from TMSB and TMSA as precursors at 573 K. ► More hydrogen in TMSB is favorable for pure SiC formation than MTS.