کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10998081 1388449 2019 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface
چکیده انگلیسی
Silicon has been grown on the (8 × 8)-reconstructed β-Si3N4(0 0 0 1) surface at 350 °C temperature. The pure Volmer-Weber growth mode has induced the formation of nano-sized silicon clusters randomly distributed on the surface. Synchrotron radiation photoelectron spectroscopy and scanning tunneling microscopy have been employed to study the system. A fit to the photoemission spectra, complemented by topographic information, has allowed us to assign each Si2p and N1s component to the different non equivalent sites of silicon and nitrogen atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 466, 1 February 2019, Pages 59-62
نویسندگان
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