کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11007967 | 1840494 | 2019 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced optical and electrical properties of antimony doped ZnO nanostructures based MSM UV photodetector fabricated on a flexible substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Undoped Zinc oxide (ZnO) and Antimony doped Zinc Oxide (Sb: ZnO) nanostructures (nanocones and nanoflakes) with different doping concentrations of Sb (3â¯at%, 6â¯at% and 9â¯at%), were grown on flexible (ITO/PET) substrate using a simple hydrothermal method. The seed layer of ZnO was prepared using sol-gel method, which was then used as the base to grow Sb: ZnO nanostructures by hydrothermal method. Structural, optical and electrical characteristics of undoped and Sb: ZnO nanostructures were studied for three different doping concentrations of Sb. The structural and morphological studies of the prepared samples were carried out using XRD and FESEM. EDAX was used for elemental analysis. The XRD spectrum reveals ZnO wurtzite structures. The FESEM results clearly indicate that there was no change in morphology of ZnO nanostructures with the substitution of Sb in ZnO lattices. The optical studies were performed on all samples using UV-Vis spectroscopy. It was observed that the transmission and the bandgap energy reduced with an increase in doping concentration. IV curves were plotted using an impedance analyzer. The samples were studied under dark conditions and under UV light of 365â¯nm. A monotonic increase in electrical conductivity was observed with increase in doping concentration, asserting the fact that addition of Sb to ZnO increases the conductivity of the samples, making Sb: ZnO a good candidate for photodetection. The responsivity and efficiency of the device under UV illumination of 365â¯nm were found to be 2.62â¯A/W and 893.35% respectively, with the highest values being observed for 9â¯at% of Sb doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 90, February 2019, Pages 26-31
Journal: Materials Science in Semiconductor Processing - Volume 90, February 2019, Pages 26-31
نویسندگان
Nazia Fathima, N. Pradeep, Jyothi Balakrishnan,