کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11262689 | 1840494 | 2019 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A simulation study of valence band offset engineering at the perovskite/Cu2ZnSn(Se1-xSx)4 interface for enhanced performance
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Proper valence band offset at the perovskite/hole transport material interface is critical to obtain high performance perovskite solar cells. The Cu2ZnSn(Se1-xSx)4 compound is a potential candidate of hole transport material for perovskite solar cells and exhibits tunable band gap from 0.95â¯eV for Cu2ZnSnSe4 to 1.5â¯eV for Cu2ZnSnS4 with different S/(S+Se) ratio, which offers a feasible approach to engineering the valence band offset at the perovskite/Cu2ZnSn(Se1-xSx)4 interface. Here, the valence band offset engineering at the perovskite/Cu2ZnSn(Se1-xSx)4 interface is studied through numerical simulation with SCAPS package. The valence band offset can be tuned from negative value to positive value with different Cu2ZnSn(Se1-xSx)4 composition. With optimized S concentration, a suitable valence band offset (0.27â¯eV) is obtained, leading to a power conversion efficiency of 20.25%. Further optimization of thickness, defect density, and acceptor density of the Cu2ZnSn(Se1-xSx)4 transport layer is conducted, and power conversion efficiency of 20.77% is obtained. This study here provides a guidance to further optimize the performance of perovskite solar cells with Cu2ZnSn(Se1-xSx)4 hole transport material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 90, February 2019, Pages 59-64
Journal: Materials Science in Semiconductor Processing - Volume 90, February 2019, Pages 59-64
نویسندگان
Nian Cheng, Weiwei Li, Shujie Sun, Zhiqiang Zhao, Zhenyu Xiao, Zhuzhu Sun, Wei Zi, Liang Fang,