Influence of doping on physical properties of vitreous As2Se3

The influence of impurities added in different chemical forms on the physical properties of vitreous As2Se3 is investigated. The impurities used can substantially change the electrical (U, Ga, and Cu), dielectric (U, Tl, Ge, and Cu), thermo-physical (O, Ge, and Tl), or mechanical (B, Hg, In) properties of the glass. Doping with small amounts of oxygen results in a distinct decrease of Tg. The most electrically effective impurity is U - at 0.2 mol%; it decreases the conductivity by 10−3 times and the permittivity by 25%. For electrical applications, Ti seems to be a suitable scavenger; it binds oxygen effectively but influences the electrical conductivity only slightly.