کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1486846 992256 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
چکیده انگلیسی

In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZT films crystallized at 450, 500 and 550 °C, instead of at conventional high temperatures (≥600 °C). Investigation of the crystalline structure and electrical properties indicated that the PZT film, crystallized at 500 °C, was suitable for FGT fabrication because of a high (111) orientation, large remnant polarization of 38 μC/cm2 on SiO2/Si substrate and 17.8 μC/cm2 on glass, and low leakage current of 10−6 A/cm2. In sequence, we successfully fabricated FGT with all processes below 500 °C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of 105, field-effect mobility of 0.092 cm2 V−1 s−1, and retention time of 1 h.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Science: Advanced Materials and Devices - Volume 1, Issue 1, March 2016, Pages 75–79
نویسندگان
, , , ,