Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

• Ti-doped sapphires were grown by Czochralski technique and Verneuil technique.
• Radial distribution of Ti3+ and Ti4+ concentrations were evaluated by luminescence.
• Titanium distribution profiles are correlated to the relative growing techniques.

The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.