Ballistic electron propagation through periodic few-layer graphene nanostructures

• Propagation in periodic few-layer graphene structures and/or semiconducting stripes.
• Transmission coefficient calculation using transfer and interface matrices.
• Different periodic structures modulate differently the electrical current.
• Method to model ballistic transport in all-graphene devices.

We have studied electron propagation in periodic structures containing mono- and few-layer graphene regions and/or semiconducting stripes. The calculation of the transmission coefficient in all cases has been performed using transfer matrices inside regions with the same material/potential energy, as well as interface matrices between regions in which the evolution laws of charge carriers differ. Numerical simulations of the transmission coefficient, as well as of the low-temperature conductance, suggest that different periodic structures modulate differently the electrical current. The obtained results can be used to model ballistic transport in all-graphene devices, in particular in few-layer graphene structures.