کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1543658 1512865 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strong n-type molecule as low bias negative differential resistance device predicted by first-principles study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Strong n-type molecule as low bias negative differential resistance device predicted by first-principles study
چکیده انگلیسی
A first-principles study of the transport properties of two thiolated pentacenes sandwiching ethyl is performed. The thiolated pentacene molecule shows strong n-type characteristics when contact Ag lead because of low work function about metal Ag. A strong negative differential resistance (NDR) effect with large peak-to-valley ratio of 758% is present under low bias. Our investigations indicate that strong n- or p-type molecules can be used as low bias molecular NDR devices and that the molecular NDR effect based on molecular-level leaving not on molecular-level crossing has no hysteresis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 84, October 2016, Pages 263-267
نویسندگان
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