کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1543669 1512865 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Buckling of dislocation in graphene
ترجمه فارسی عنوان
گسستن جابجایی در گرافن
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی


• Buckling of dislocation in graphene is discussed by the lattice and elastic theory.
• The buckling is influenced by different structure of dislocations.
• The critical stress and distance between the extrusive and stretching area are vital.

The buckling of dislocation in graphene is discussed through the lattice theory of dislocation and elastic theory. The approximate solution of the buckling is obtained based on the inner stress distribution caused by different structure of dislocations and is proved to be suitable by the simulation. The position of the highest buckling is predicted to be at the vertex of the pentagon far away from the heptagon. The buckling is strongly influenced by the internal stress and the distance between the extrusive area and stretching area, as well as the critical stress σc. The SW defect is proved to be unbuckled due to its strong interaction between extrusion and stretching.

The top view and side view of the structure of 5–7 pairs in graphene.The red circle emphases the highest atom of buckling. (right) The comparison of P and structure of 5–7 pairs in graphene. The P is in unit of μ. 1. The position of the highest buckling is predicted to be at the vertex of the pentagon far away from the heptagon. 2. 0.78a represents the highest buckling height from the simulated result, and 1.83a is the breadth of the buckling.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 84, October 2016, Pages 340–347
نویسندگان
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