Multi-layer graphene membrane based memory cell

• Scheme and operational principles of memory cell based on graphene membrane bending.
• Lifetime more than thousand years is applicable for long-term archival storage.
• Switching voltage between non-conducting OFF and conducting ON states is only a few volts.
• Bistability conditions are determined for memory cell in size from 50 to 400 nm.
• Recording and reading of information by probe tip.

The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.

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