Change of the short-range scattering in the graphene covered with Bi2O3 clusters

• The hole doping enhanced after the metal on graphene is completely oxidized.
• O-species adsorbates absorbed after exposing the graphene in air.
• The short-range scattering center induced by Bi2O3 and O-species adsorbates.
• The influence of O-species adsorbates from the air is restorable with annealing at 350 K.

In this work, we have studied the oxidation process of the bismuth doped graphene in the ambient air. Complete oxidation of the bismuth clusters and that of the graphene are firmly confirmed. The influence of oxygen on the graphene is characterized by means of Hall measurement and SdH oscillation. All transport measurements demonstrate a hole-type doping behavior. Our work also demonstrates that the short-range scattering mechanism is enhanced in doped graphene due to accumulated O-species adsorbates after being exposed in the atmosphere for 40 days and is suppressed after annealing. This investigation may open a new perspective for fabricating the graphene metal oxide devices.