کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1544093 1512879 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel nanoscale low-voltage SOI MOSFET with dual tunnel diode (DTD-SOI): Investigation and fundamental physics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A novel nanoscale low-voltage SOI MOSFET with dual tunnel diode (DTD-SOI): Investigation and fundamental physics
چکیده انگلیسی


• Proposal of a PD-SOI MOSFET including a dual tunnel diode.
• Suppression of the kink effect owing to tunnel current of tunnel diode.
• Considerable improvement of the critical electrical and thermal characteristics.

In this paper, critical electrical characteristics of a nanoscale low-voltage partially-depleted silicon-on-insulator (PD-SOI) MOSFET have been improved in terms of floating body effect, short channel effects, subthreshold swing, leakage current, self-heating effect, voltage gain, parasitic bipolar device effect, parasitic capacitance, and unilateral power gain. The heart of the proposed structure is a dual tunnel diode formed by a heavily doped P-type L-shaped trench. The accumulated holes are effectively released by the tunnel current of the dual tunnel diode. The proposed structure is found to be free of kink effect. Other substantial parameters of the proposed structure have been improved owing to L-shaped trench. Comparing the proposed structure with a conventional SOI (C-SOI), the proposed structure is considered as an undeniable contender in nanoscale integrated applications.

The presence of P-type L-shaped trench inside the channel and the buried oxide causes the kink effect successfully postponed by the created tunnel diode.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 70, June 2015, Pages 101–107
نویسندگان
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