Catalyst-free ZnO nanowires on silicon by pulsed laser deposition with tunable density and aspect ratio

ZnO nanostructures were grown on Si(1 1 1) via pulsed laser deposition. The morphology of the ZnO was tunable based on the pressure of the atmosphere during deposition: deposition in vacuum produced a thin film, deposition at intermediate pressures (75 mTorr) yielded nanoclusters of ZnO and deposition at higher pressures (>250 mTorr) produced c-axis oriented nanowires. Through variation of the deposition temperature and pressure it was possible to control the nanowire density, height, and diameter. Room temperature photoluminescence spectroscopy reveals exciton to defect peak ratios greater than 100 suggesting much greater stoichiometry and reduced defect density than found in catalyst-formed ZnO nanowires. The evolution of the ZnO nanowire growth was examined through X-ray diffraction and electron microscopy. Using a two-step deposition procedure involving depositing a seed layer at a low temperature with further deposition at a higher temperature we were able to increase the height of the nanowires without increasing the diameter. These two-step structures were seen to come in two morphological forms – ZnO needles and porous, nested ZnO nanostructures.