Silicon carbide nanowires synthesized with phenolic resin and silicon powders

Large-scale silicon carbide nanowires with the lengths up to several millimeters were synthesized by a coat-mix, moulding, carbonization, and high-temperature sintering process, using silicon powder and phenolic resin as the starting materials. Ordinary SiC nanowires, bamboo-like SiC nanowires, and spindle SiC nanochains are found in the fabricated samples. The ordinary SiC nanowire is a single-crystal SiC phase with a fringe spacing of 0.252 nm along the [1 1 1] growth direction. Both of the bamboo-like SiC nanowires and spindle SiC nanochains exhibit uniform periodic structures. The bamboo-like SiC nanowires consist of amorphous stem and single-crystal knots, while the spindle SiC nanochains consist of uniform spindles which grow uniformly on the entire nanowires.