کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1552546 | 1513204 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of structural and optical properties of GaN on flat and porous silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of structural and optical properties of GaN on flat and porous silicon Investigation of structural and optical properties of GaN on flat and porous silicon](/preview/png/1552546.png)
چکیده انگلیسی
In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that the grown film on Flat-Si had smoother surface, even though there were some cracks on it. Furthermore, the X-ray diffraction measurements showed that the peak intensity of all the grown layers on PSi was higher than that of the grown layer on Flat-Si. Our detailed observation showed that PSi is a promising substrate to obtain GaN films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 97, September 2016, Pages 586-590
Journal: Superlattices and Microstructures - Volume 97, September 2016, Pages 586-590
نویسندگان
Saleh H. Abud, Abbas M. Selman, Z. Hassan,