Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study

• It was shown that junction-less CNT transistors have weak results in the OFF state.
• It is because of small energy bandgap of CNTs.
• The change of bandgap is one of the effects of applying uniaxial strain on CNTs.
• Then, the effects of strain on electrical properties of these FETs are investigated.
• We show that stain can significantly alter the OFF state behavior of the device.

Numerical studies on junctionless carbon nanotube field-effect transistors (JL-CNTFETs) have indicated that these devices produce more ON current than silicon junctionless transistors in comparable dimensions. Nevertheless, due to the smaller bandgap and quantum confinement effects, they provide weaker results in the OFF state. Since the change of energy bandgap is one of the effects of applying uniaxial strain on CNTs, in this paper, using non-equilibrium Green's function method (NEGF), the effects of applying strain on electrical characteristics of JL-CNTFETs, such as ION and IOFF, intrinsic delay, ION/IOFF ratio, power-delay product, unity-gain frequency, gate transconductance, and output resistance are investigated. The simulation results show that uniaxial stain, significantly alters the OFF state behavior and as a result the electrical properties of the device.